GaN substrate formed over GaN layer having discretely formed minute holes produced by use of discretely arranged growth suppression mask elements

摘要

In a process for producing a substrate for use in a semiconductor element: a growth suppression mask which is constituted by a plurality of mask elements being discretely arranged and each having a width of 2.5 micrometers or smaller is formed on a surface of a base substrate; a first GaN layer having a plurality of holes is formed on the surface of the base substrate by growing GaN from areas of the surface of the base substrate which are not covered by the plurality of first mask elements; and a second GaN layer is formed over the first GaN layer by crystal growth.