Staggered-type Tunneling Field Effect Transistor

摘要

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

主权项

1. A tunneling field effect transistor comprising:
a doped region formed in a semi-conductive substrate; an epitaxial region formed overlapping the doped region in an overlapping region; and a gate formed adjacent to the overlapping region; wherein the doped region serves as a source or drain and the epitaxial region serves as a source or drain of the tunneling field effect transistor.