| 发明名称 |
Process for forming shallow isolating regions in an integrated circuit and an integrated circuit thus formed |
| 摘要 |
The formation of the isolating region includes ion implantation in the voluminal part, followed by annealing of said implanted voluminal part (7) of the substrate (1).
|
| 申请公布号 |
US6561839(B2) |
申请公布日期 |
2003.05.13 |
| 申请号 |
US20010933784 |
申请日期 |
2001.08.21 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LUNENBORG MEINDERT MARTIN;DE COSTER WALTER JAN AUGUST;INARD ALAIN;ARNAUD FRANCK |
| 分类号 |
H01L21/76;H01L21/762;H01L27/08;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
