| 发明名称 |
Method for fabricating a semiconductor device having a metallic silicide layer |
| 摘要 |
A protective layer is formed on a metallic layer prior to forming a metallic silicide layer, and the protective layer has a thickness thicker than that of the metallic layer.
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| 申请公布号 |
US2003096491(A1) |
申请公布日期 |
2003.05.22 |
| 申请号 |
US20020283189 |
申请日期 |
2002.10.30 |
| 申请人 |
HIZAWA KAZUYA |
发明人 |
HIZAWA KAZUYA |
| 分类号 |
H01L21/28;H01L21/265;H01L21/3205;H01L21/336;H01L23/52;H01L29/49;H01L29/786;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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