| 摘要 |
PURPOSE: A slurry composition for polishing metal lines in CMP(Chemical Mechanical Polishing) process is provided to minimize the amount of metal impurities left on the wafer surface and to prevent the diffusion of metal impurities into the semiconductors. CONSTITUTION: The slurry composition for polishing metal lines is characterized by comprising a metal oxide, an inorganic oxidant, a thiol compound, nitric acid, aqueous ammonia and deionized water. In particular, the slurry composition comprises 0.5 to 25 wt% of the metal oxide, 0.0001 to 0.01 wt% of the inorganic oxidant, 0.05 to 3.0 wt% of the thiol compound, 0.0001 to 0.01 wt% of aqueous ammonia, 0.3 to 0.5 wt% of nitric acid and the balance of deionized water. |
