| 摘要 |
PURPOSE: A method for forming a metal contact of a semiconductor device is provided to be capable of obtaining stable contact resistance by forming a barrier metal film using PVD and CVD and simplifying processes without using RTP(Rapid Thermal Processing). CONSTITUTION: After forming an insulating layer(2) on a silicon substrate(1), a contact hole is formed by selectively etching the insulating layer(2). A Ti film(4) is firstly deposited on the resultant structure including the contact hole by using PVD(Physical Vapor Deposition). A Ti film(5) and a TiN layer(6) are sequentially deposited on the Ti film(4) by using CVD(Chemical Vapor Deposition).
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