FERROELECTRIC MEMORY DEVICE USING VIA ETCHING INHIBITING FILM AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric memory device and its manufacturing method. SOLUTION: Several ferroelectric capacitors 60 which are two-dimensionally arranged in rows and columns are provided on a lower interlayer insulating film 35. A top of the ferroelectric capacitors 60 are exposed without interlayer insulating films 70 which cover between the ferroelectric capacitors 60. Via etching inhibiting film patterns 80a are formed only on the interlayer insulating films 70. Several plate lines 120 are electrically connected with ferroelectric capacitors 60 which are arranged on at least two adjacent rows, and are arranged in such a way that they are in contact with via etching inhibiting film patterns 80a between the ferroelectric capacitors 60. Accordingly, since it is not necessary to form via holes for coupling plate lines for each cell, the device can be further highly integrated. Since the lower interlayer insulating film 70 is protected by the formed via etching inhibiting film patterns 80a, the deterioration of characteristics of the capacitors can be prevented. COPYRIGHT: (C)2003,JPO