| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which deterioration in a form of a gate electrode structure is prevented and further contamination of a surface of a substrate is prevented, when a gate electrode is formed. SOLUTION: When the gate electrode of a laminated structure is manufactured, a polysilicon layer 13 and a tungsten silicide layer 14 are accumulated, and then only the tungsten silicide layer 14 is etched, and a sidewall of the tungsten silicide layer 14 exposed by the etching is protected by a polysilicon film 17. Then the lower polysilicon layer 13 is etched, and the sidewall of the lamination is oxidized to make a gate side wall oxide film 19. Further a gate side wall 21 is formed. COPYRIGHT: (C)2004,JPO
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