| 摘要 |
PURPOSE: A DMOS(Double Diffused Metal Oxide Semiconductor) transistor having a structure of a pocket-type junction layer and a manufacturing method thereof are provided to be capable of conserving a low threshold voltage. CONSTITUTION: A DMOS transistor is provided with a semiconductor substrate having an isolation layer(102), a gate electrode(106) formed on the semiconductor substrate, an oxide layer spacer(112) formed at both sidewalls of the gate electrode, and the first semiconductor layer(110) between one side of the gate electrode and the isolation layer in the semiconductor substrate. The DMOS transistor further includes the second semiconductor layer(116) formed in the first semiconductor layer as a pocket type junction layer, the third semiconductor layer(120) between the other side of the gate electrode and the isolation layer in the semiconductor substrate, the fourth semiconductor layer(128) formed in the second semiconductor layer, and a pair of fifth semiconductor layer(122) formed in the second semiconductor layer.
|
