发明名称 |
Method for light exposure |
摘要 |
A light exposure method in which, when a resist layer is selectively exposed to one of X-rays containing soft X-rays, vacuum ultraviolet light rays and ultraviolet rays containing extreme ultraviolet light rays for patterning the resist layer to a pre-set shape, a high molecular material having pre-set oxygen content ratio (no) and density (rho) is applied to form a resist layer having a film thickness not less than 250 nm. Since the high molecular material having the pre-set oxygen content ratio (no) and density (rho) is used, a resist pattern of a better shape may be obtained even if the resist layer is of an increased thickness of not less than 250 nm. Since the film thickness of the resist layer is not less than 250 nm, it is possible to construct a lithographic process superior in etching resistance to realize ultra-fine machining than was heretofore possible.
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申请公布号 |
US6677108(B2) |
申请公布日期 |
2004.01.13 |
申请号 |
US20010907345 |
申请日期 |
2001.07.17 |
申请人 |
SONY CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUZAWA NOBUYUKI;IRIE SHIGEO |
分类号 |
G03F7/039;G03F7/20;G03F7/26;H01L21/027;(IPC1-7):G03C5/56 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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