CSP TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A CSP(Chip Scale Package) type semiconductor device and manufacturing method thereof are provided to be capable of considerably improving current efficiency. CONSTITUTION: A CSP type semiconductor device is provided with a semiconductor substrate(101), the first conductive type epitaxial layer(102) formed at the upper portion of the semiconductor substrate, and a plurality of second conductive type impurity regions(103) spaced apart from each other at the first conductive type epitaxial layer. The CSP type semiconductor device further includes a plurality of first comb type electrodes(115) formed between the second conductive type impurity regions at the first conductive type epitaxial layer, and a plurality of second comb type electrodes(116) formed at the second conductive type impurity region. The CSP type semiconductor device further includes the first and second connection part, and a protecting layer(119) formed at the upper portion of the semiconductor substrate.