| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device of enhanced stiffness by easily forming a supporting plate of high electric conductivity. <P>SOLUTION: A metal blank (1) causing age hardening is prepared and pre-heated up to a preliminary hardening temperature causing preliminary age hardening. Then the blank (1) is machined to easily form a supporting electrode (2) in an accurate shape, and then the supporting electrode (2) is heated up to a final hardening temperature causing final age hardening. Then a semiconductor element (10) is made to adhere to the supporting electrode (2) with a brazing material, to manufacture the semiconductor device. The stiffness of the blank (1) in which preliminary age hardening is caused is lower than that of the supporting electrode (2) in which final age hardening is caused. <P>COPYRIGHT: (C)2004,JPO</p> |
