| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to reduce an aspect ratio of a trench by forming and recessing the first HDP(High Density Plasma) oxide layer. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(100). A trench is formed by etching the pad nitride layer, the pad oxide layer, and the semiconductor substrate. A thermal oxide layer(140) is formed by oxidizing a surface of the semiconductor substrate within the trench. A barrier nitride layer(150) and a first oxide layer(165) are formed on thereon. A photoresist pattern is formed within the trench. The first oxide layer under the trench is exposed by etching a first HDP oxide layer and the photoresist pattern. A second oxide layer is formed thereon. The barrier nitride layer is exposed by etching the second oxide layer. The barrier nitride layer, the pad nitride layer, and the pad oxide layer are removed therefrom.
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