发明名称 |
SINGLE CHIP DATA PROCESSOR HAVING EMBEDDED NON-VOLATILE MEMORY COMPOSED OF VARIOUS OPTIMIZED TRANSISTORS |
摘要 |
PURPOSE: A single chip data processor having an embedded non-volatile memory is provided to increase a scale of integrity of a semiconductor device while maintaining a characteristic of the non-volatile memory by using various optimized transistors. CONSTITUTION: A single chip data processor includes a substrate(100), a first well(131), a second well(141), and a non-volatile memory cell. The substrate has a first doping concentration and a first conductive type. The first well is formed on the substrate. The second well has a depth greater than that of the first well and has a doping concentration higher than the first doping concentration and the first conductive type. The non-volatile memory cell is formed on the second well. The non-volatile memory cell is an EEPROM(Electrically Erasable Programmable Read Only Memory).
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申请公布号 |
KR20040110666(A) |
申请公布日期 |
2004.12.31 |
申请号 |
KR20030040087 |
申请日期 |
2003.06.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN, JEONG UK;KIM, BYEONG HO;KIM, JU RI;KIM, SANG SU;PARK, SEONG CHEOL;PARK, WON HO;YOO, HYEON GI;YOON, SEUNG BEOM |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8247;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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