发明名称 POWER GRID AND BUMP PATTERN HAVING SMALL RESISTANCE AND SMALL INDUCTANCE
摘要 PROBLEM TO BE SOLVED: To provide a new method and new apparatus for reducing DC/AC voltage variations in the level of the transistor of an IC chip. SOLUTION: The new apparatus has a plurality of pairs of power buses and ground buses. Each pair of power bus and ground bus has a power bus and a ground bus. Further, the new apparatus has a first power bus of the first pair of power bus and ground bus of the plurality of pairs of power buses and ground buses. The first power bus has a plurality of power bumps. Also, the new apparatus has a first ground bus of the first pair of power bus and ground bus of the plurality of pairs of power buses and ground buses. The first ground bus has a plurality of ground bumps. The respective power bumps are disposed substantially an equal distance apart from the arbitrary directly adjacent ground bumps to each other of the first ground bus. Also, the respective ground bumps are disposed substantially an equal distance apart from the arbitrary directly adjacent power bumps to each other of the first power bus. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005005654(A) 申请公布日期 2005.01.06
申请号 JP20030177807 申请日期 2003.06.23
申请人 SUN MICROSYST INC 发明人 TOMSIO NAYON;SCHMIDT STEVEN A;WHITNEY LINDA S
分类号 H01L21/822;H01L21/82;H01L23/50;H01L23/528;H01L27/04;(IPC1-7):H01L21/822 主分类号 H01L21/822
代理机构 代理人
主权项
地址