| 发明名称 |
THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME |
| 摘要 |
A thin film transistor includes: a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the gate insulating layer; a source electrode on the first semiconductor layer, a drain electrode on the first semiconductor layer and spaced apart form the source electrode; a second semiconductor layer on a channel region of the first semiconductor layer and on the source electrode and the drain electrode; a passivation layer on the second semiconductor layer; and an upper gate electrode disposed on the passivation layer, corresponding to the channel region. |
| 申请公布号 |
US2016329432(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201514931172 |
申请日期 |
2015.11.03 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK Joon Seok;KIM Bosung;KIM Changjung |
| 分类号 |
H01L29/786;H01L27/12;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor comprising:
a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the gate insulating layer; a source electrode on the first semiconductor layer; a drain electrode on the first semiconductor layer and spaced apart from the source electrode; a second semiconductor layer on a channel region of the first semiconductor layer and on the source electrode and the drain electrode; a passivation layer on the second semiconductor layer; and an upper gate electrode disposed on the passivation layer, corresponding to the channel region. |
| 地址 |
Yongin-si KR |
