发明名称 ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an etching method capable of forming a structure with a large hollow section and a space section having a complicated constitution and further the structure having a high aspect ratio with an excellent form accuracy without deteriorating the surface state, because a sacrificial layer can be removed by an etching at a sufficient speed from a fine etching opening. SOLUTION: An article to be treated is exposed in a treating fluid containing etching reaction species, and the treating fluid is kept under a fluidized state to the article to be treated (a fourth step S4). The surface of the article to be treated is irradiated intermittently with an irradiating light under the state, and the article to be treated is heated intermittently (a fifth step S5). Accordingly, an etching is conducted while the treating fluid in the vicinity of the article to be treated is heated intermittently and expanded and shrunk. A substance under a supercritical state, in which the etching reaction species are contained, is used preferably as the treating fluid. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136013(A) 申请公布日期 2005.05.26
申请号 JP20030368221 申请日期 2003.10.29
申请人 SONY CORP 发明人 MURAMOTO JUNICHI
分类号 H01L21/302;B81C1/00;H01L21/306;H01L21/3065;H01L21/311;(IPC1-7):H01L21/306 主分类号 H01L21/302
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