| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device reduced in the generating rate of faulty disconnection in a conduction via due to stress migration, and to provide its manufacturing method. SOLUTION: The semiconductor device is provided with a multi-layer wiring structure which comprises a first wiring layer 13, a second interlayer insulating film 14 arranged on the first wiring layer 13, the conduction via 31 buried into a first via hole in the second interlayer insulating film 14 and whose lower end is contacted with the first wiring layer 13, a sacrifice via 32 buried into a second via hole in the second interlayer insulating film 14 and whose lower end is contacted with the first wiring layer 13 while the upper end thereof is in opened state electrically, and a second wiring layer 15 arranged at the vicinity of surface of the second interlayer insulating film 14 and connected to the upper end of the conduction via 31. COPYRIGHT: (C)2005,JPO&NCIPI |
