| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein even if the ratio of the area of an insulating trench having a depth of 5μm or larger to that of the entire wafer is made large, warpage of a wafer is suppressed, in a wafer processing step and a leak current due to stress is made difficult to increase, and wherein the degradation of temperature characteristics or the reduction in reliability due to an increase in crystal defect is kept low. SOLUTION: The method for manufacturing a semiconductor device includes a step, where after all silicon semiconductor substrates 5 among a plurality of stripe-like square trenches 4 have almost changed into oxide films, the stripe-like square trenches 4 with a predetermined width are formed on their surfaces so that the silicon semiconductor substrates 5 have gaps 7a in the trenches 4; a step where the silicon semiconductor substrates are thermally oxidized to change all the silicon semiconductor substrates 5 among the trenches 4 to silicon oxide films; and a step where the gaps 7a of the silicon oxide film in the trenches 4 are filled with an insulating film 8. In this case, the insulating film has such a properties of releasing the stresses generating between the silicon semiconductor substrate and the silicon oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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