发明名称 TECHNIQUES TO ENGINEER NANOSCALE PATTERNED FEATURES USING IONS
摘要 A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.
申请公布号 US2016379816(A1) 申请公布日期 2016.12.29
申请号 US201514749822 申请日期 2015.06.25
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Ruffell Simon;Hautala John;Brand Adam;Dai Huixiong
分类号 H01L21/027;H01L21/308 主分类号 H01L21/027
代理机构 代理人
主权项 1. A method of patterning a substrate, comprising: providing a surface feature in a layer, the layer disposed on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, wherein the surface feature has a third dimension along the first direction different than the first dimension, and wherein the first exposure does not etch the substrate.
地址 Gloucester MA US