| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive element and a magnetic memory which can perform spin injection magnetization reversal at high speed with a low current, while suppressing temperature rise.SOLUTION: A magnetoresistive element 1 includes: a lamination film 19 having a first magnetic layer 12 (reference layer), a nonmagnetic layer 14 provided on the first magnetic layer and a second magnetic layer 16 (storage layer) provided on the nonmagnetic layer; a conductor 20 (contact plug) provided on the second magnetic layer, and having a lower surface, an upper surface facing the lower surface, and a side face different from the lower surface and upper surface, where the area of the lower surface is smaller than that of the upper surface, and the area of the lower surface is smaller than that of the upper surface of the second magnetic layer 16; and a sidewall film 22 provided on the side face of the conductor and containing carbon.SELECTED DRAWING: Figure 1 |
