METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a capacitor of a semiconductor device. SOLUTION: This method comprises a step for forming a capacitor electrode by etching a metal nitride film under an environment containing fluorine and oxygen. The metal nitride film may be plasma-etched under an environment containing fluorine plasma. The fluorine may consist of at least one of CF4and CHF3. Further, the metal nitride film may comprise at least one out of titanium, tantalum and tungsten. The metal nitride film may be plasma-etched under an environment where a power of 600 W or less is supplied. COPYRIGHT: (C)2006,JPO&NCIPI