| 摘要 |
PROBLEM TO BE SOLVED: To accurately and simply form gate insulating films of different electric film thicknesses using a High-k film on the front surface of the same semiconductor substrate under high reproducibility. SOLUTION: An n well layer 2 surface part of a silicon substrate 1 is partitioned by an element isolation region 3. In the MISFET of a peripheral circuit part, a first gate insulating film 6 having a multilayer film of a base oxide film 4 of 4-6 nm of film thickness, a nitride layer 4a of its modified layer, a High-k film 5 and a nitride layer 5a of its modified layer is formed. In the MISFET of an internal circuit part, a second gate insulating film 13 having a multilayer film of a ground film 12 of about 1 nm of film thickness, a nitride layer 12a of its modified layer, the High-k layer 5 and a nitride layer 5a of its modified layer is formed. The High-k film 5 becomes suitably an insulating film of HfSiOx, ZrSiOx, HfAlOx or ZrAlOx. COPYRIGHT: (C)2006,JPO&NCIPI
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