发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a laser irradiation apparatus reducing the proportion of a region in which a microcrystal is formed occupying the entire region irradiated with laser beams and performing satisfactory laser irradiation to a semiconductor film, and provide a laser irradiation method. SOLUTION: By passing a laser beam 104 emitted from a laser oscillator 101 through a slit 102, a portion with weak intensity is intercepted. After that, the laser beam is deflected by a mirror 103. The laser beam is formed into a beam of an optional size by using convex-type cylindrical lenses 105 and 106 or convex type spherical lenses, and then an irradiated surface is irradiated with it. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093677(A) 申请公布日期 2006.04.06
申请号 JP20050241697 申请日期 2005.08.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;ISOBE ATSUO;YAMAMOTO YOSHIAKI
分类号 H01L21/268;H01L21/20;H01L21/336;H01L21/8234;H01L21/8247;H01L27/06;H01L27/08;H01L27/088;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/268
代理机构 代理人
主权项
地址