SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To allow an InP substrate to be reused by forming a device layer subjected to pseudo-lattice matching or lattice matching on the InP substrate and peeling the InP substrate from the device layer. SOLUTION: A semiconductor device manufacturing method comprises a step for forming a sacrificial layer 12 for achieving pseudo-lattice matching or lattice matching on an indium-phosphorus (InP) substrate 11, a step for forming a device layer 13 on the sacrificial layer 12, and a step for separating the InP substrate 11 and the device layer 13 with the sacrificial layer 12 removed. COPYRIGHT: (C)2009,JPO&INPIT