| 发明名称 |
METHOD OF MAKING INSULATED GATE FIELD EFFECT TRANSISTOR |
| 摘要 |
The present invention relates to an insulated gate field effect transistor and method of making same.
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| 申请公布号 |
US3775262(A) |
申请公布日期 |
1973.11.27 |
| 申请号 |
USD3775262 |
申请日期 |
1972.02.09 |
| 申请人 |
NCR,US |
发明人 |
HEYERDAHL N,US |
| 分类号 |
H01L29/78;H01L21/28;H01L21/316;H01L21/3205;H01L21/336;H01L29/00;(IPC1-7):C23B5/48 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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