WRITE SUPPRESSION IN BIPOLAR TRANSISTOR MEMORY CELLS

摘要

A circuit is described to suppress or inhibit the driving of bipolar transistors in a memory cell or cells into saturation when a like instruction is already stored in the storage cell or cells. Suppression is accomplished by comparing the information stored in the storage cell with the information applied to the input of the cell, whereby writing is permitted to proceed if the information is not identical and inhibited such if the information is identical.