Garnet structure layers - for magnet regions of memory cells

摘要

The garnet type substances for use in magnet region propagation devices employed in data processing and storage equipment has a composition Y3-x, GdxAlyFe5-yO12. Whilst both x and y may be any number the former is pref. between 1 and 1.5 and the latter between 0.7 and 1.2. Pref. the garnet structure cpds. are deposited on non magnetic substrate of Gd3Ga5O12 and have the following compsns: Y1.5Gd1.5Al1.2Fe3.8O12, Y1.5Gd1.5Al0.7Fe4.3O12, Y2Gd1Al0.7Fe4.3O12, Y0.5Gd1.5Al1.2Fe2.8O12, Y1.7Gd1.3Al0.7Fe4.3O12. The garnet structure presents an alternative for the magnetic region propagating device which is both easier to produce and cheaper. It is used in computer technology in connection with data processing and memory cell manufacture.