Semiconductor structure suitable for electrostatic discharge protection application

摘要

A semiconductor structure suitable for ESD protection application is provided. The semiconductor structure includes a first well, a second well, a third well, a first fin, a second fin, an anode, a cathode and a first doping region. The first well and the second well are disposed in the third well. The first fin is disposed on the first well. The second fin is disposed on the second well. The anode is disposed on the first fin. The cathode is disposed on the second fin. The first doping region is disposed under the first fin, and separates the first fin from the first well. The first well, the second well, the first fin and the second fin have a first doping type. The third well and the first doping region have a second doping type.

主权项

1. A semiconductor structure, comprising:
a first well having a first doping type; a second well having the first doping type; a third well having a second doping type, wherein the first well and the second well are disposed in the third well; a first fin disposed on the first well, the first fin having the first doping type; a second fin disposed on the second well, the second fin having the first doping type; an anode disposed on the first fin; a cathode disposed on the second fin; and a first doping region disposed under the first fin, the first doping region separating the first fin from the first well, the first doping region having the second doping type.