Multi level error correction system for high density memory

摘要

This specification describes an error correction system for a high density memory made up of a number of monolithic wafers each containing a plurality of arrays that are addressed thru circuitry and wiring contained on that wafer. The storage bits on the wafers are functionally divided into a number of blocks each containing a plurality of words. The words of each block are on several wafers with each word made up of a plurality of arrays on a single array wafer. Each word in a block is protected by a similar error correction double multiple error detection code. The block is further protected by two additional check words made up using a b-adjacent code. Each byte in the check words protects one byte position of the words of the block. When a single error is detected in any word by the SEC-MED code the code corrects the error. If a multiple error is detected, the multiple error signal points to the word in error to be corrected by the b-adjacent code check words.