| 摘要 |
1450508 Photomasks; stripping compositions INTERNATIONAL BUSINESS MACHINES CORP 6 Nov 1974 [29 Nov 1973] 47936/74 Headings G2C and G2X [Also in Divisions C7 and H1 A film of e.g. Al, Al-Cu, Pt, Pd, Cr, Au, Ta, Ag, or Ti or silicon dioxide or nitride is formed as a pattern on a substrate of e.g. a semi-conductor which may have a silicon dioxide coating by (1) applying a coating of a non-photosensitive organic polymer (several examples are described but is preferably a cyclized rubber/azide composition and/or a novolak/naphthoquinone diazide positive photo-resist which has been baked to render it non- sensitive (2) evaporating a layer of inorganic material, e.g. Cu, Al, Cr, glass, silicon nitride or aluminium oxide, on the polymer, (3) forming a mask on the inorganic material by photo-resist techniques, (4) etching the desired pattern in the inorganic material, (5) using the layer of inorganic material as a mask, sputter etching the pattern in the polymer, for a time such as to form undercut openings, and (6) depositing, e.g. by sputtering, the required film. The sputter etching may be effected in argon, neon, oxygen or hydrogen. Finally the photo-resist layer is removed by a stripping composition comprising tetrachloroethylene, o-dichlorobenzene, p-dichlorobenzene and phenol. Alternatively N-methyl pyrrolidone strippers may be used. |
