发明名称 |
Minority carrier isolation barriers for semiconductor devices |
摘要 |
A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.
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申请公布号 |
US3988762(A) |
申请公布日期 |
1976.10.26 |
申请号 |
US19740474033 |
申请日期 |
1974.05.28 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
CLINE, HARVEY E.;ANTHONY, THOMAS R.;KOKOSA, RICHARD A.;WOLLEY, E. DUANE |
分类号 |
H01L21/761;H01L21/00;H01L21/18;H01L21/76;H01L27/08;H01L29/00;(IPC1-7):H01L27/04;H01L29/04;H01L29/16;H01L29/20 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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