ETCHING METHOD

摘要

A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

主权项

1. A method of etching a first region and a second region of a processing target object at the same time, the first region including a multilayered film in which silicon oxide films and silicon nitride films are alternately stacked on top of each other, the second region including a silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region, and the processing target object having a mask provided with openings on the first region and the second region, the method comprising:
generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which the processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus, wherein the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.