GaAs-GaAlAs semiconductor having a periodic corrugation at an interface

摘要

A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700 DEG C. to the corrugated surface of the GaAs layer and cooling the solution to a temperature of about 670 DEG C. at a cooling rate of 5 DEG C./min. whereby the periodic corrugation is not transfigured so much.