发明名称 |
MASK AND METHOD OF FABRICATING DISPLAY DEVICE USING THE MASK |
摘要 |
A mask includes a base substrate, and a light shielding pattern including a light transmitting portion and a light shielding portion on the base substrate, wherein the light shielding portion includes a third source electrode portion, a third drain electrode portion spaced apart from the third source electrode portion and including at least a portion parallel to the third source electrode portion, a first auxiliary light shielding portion at an end portion of the third source electrode portion facing the third drain electrode portion, and a second auxiliary light shielding portion at an end portion of the third drain electrode portion facing the third source electrode portion. |
申请公布号 |
US2016377928(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201615095301 |
申请日期 |
2016.04.11 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK Inho;YU Sehwan;KIM Kyoungjun;SON Jihyeon |
分类号 |
G02F1/1337;G02F1/1362;G02F1/1343;G02F1/1335;G02F1/1368 |
主分类号 |
G02F1/1337 |
代理机构 |
|
代理人 |
|
主权项 |
1. A mask comprising:
a base substrate; and a light shielding pattern comprising a light transmitting portion and a light shielding portion on the base substrate, wherein the light shielding portion comprises: a first source electrode portion; a first drain electrode portion spaced apart from the first source electrode portion; a second source electrode portion connected to the first source electrode portion; a second drain electrode portion spaced apart from the second source electrode portion; a third source electrode portion connected to the second drain electrode portion; a third drain electrode portion spaced apart from the third source electrode portion and including at least a portion parallel to the third source electrode portion; a first auxiliary light shielding portion at an end portion of the third source electrode portion facing the third drain electrode portion; and a second auxiliary light shielding portion at an end portion of the third drain electrode portion facing the third source electrode portion. |
地址 |
Yongin-si KR |