Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same

摘要

A semiconductor integrated circuit includes first and second island regions, surrounded by a bottomed dishlike dielectric layer formed on one side of a support body. A MOS transistor element is formed in the first island region, whose gate region is located at the bottom side of the island region. The gate electrode is connected to a bottom portion of the second island region, which is used as a gate electrode contact region, in the support body using a interconnection lead. There is a method for manufacturing the above device.