Masking method for semiconductor devices with high surface topography

摘要

The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.

主权项

1. A method of producing a semiconductor device, comprising:
providing a semiconductor body or substrate having a main surface with a recess or trench in the main surface; applying a mask above the main surface, the mask covering the recess or trench, so that the recess or trench and the mask form a closed cavity, which is filled with a gas; and forming a plurality of openings in the mask, the openings being arranged on the periphery of the recess at a distance from the recess or trench, the distance being adapted to allow the gas to escape from the cavity via the openings when the difference between a pressure exerted on the mask by the gas and a pressure exerted on the mask from outside the recess or trench is larger than a predefined value.