发明名称 |
Line width roughness improvement with noble gas plasma |
摘要 |
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist mask, ionizing the UV producing gas to produce UV rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask. |
申请公布号 |
US9466502(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201615016040 |
申请日期 |
2016.02.04 |
申请人 |
Lam Research Corporation |
发明人 |
Cheng Shih-Yuan;Liu Shenjian;Hong Youn Gi;Fu Qian |
分类号 |
H01L21/3065;H01L21/308;H01L21/027;H01L21/311;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
Beyer Law Group LLP |
代理人 |
Beyer Law Group LLP |
主权项 |
1. A method for etching features in an etch layer disposed below a photoresist mask and over a substrate in a vacuum chamber, comprising:
providing a high-intensity vacuum ultra-violet (VUV) producing gas comprising argon gas into the vacuum chamber; ionizing the argon gas to produce VUV rays to irradiate the photoresist mask; and etching the features into the etch layer through the photoresist mask. |
地址 |
Fremont CA US |