| 摘要 |
PURPOSE:To ensure the high-efficiency storage and reproduction of the energy for the photo semiconductor thin plate to which a contact of the metal electrode is given, by combining the half-cell soaked into the electrolyte containing the metal ion via the optical exitation with the oxidation reducing half-cell via the material which does not block the ion shifting between them. CONSTITUTION:Thin plate 3 is produced by sintering the rutile-type TiO2 powder, and In2 is evaporated to attach the copper wire. Then silver auxiliary electode 8 is provided to secure a contact between plate 3 and In2, thus preventing In from eluting out into electroyte 4. Copper wire 1 is made to pass through the Pyrex tube to be coated with epoxy resin 7. This electrode undergoes the light charging by being soaked into electrolyte 4 of AgNO3 of 1N and KNO3 of 1N. The oxidation reducing half-cell in which Pt is soaked into the electrolyte containing KNO3 of 1N, CeNO3 of 0.05N and Ce2SO4 of 0.05N is used as the opposite electrode, and both electrolyte are combined via the salt bridge and then kept at 25 C to obtain load 12. In this constitution, the light reproeuction efficiency does not deteriorates by the light reproducing frequency for the cell, securing an extremely high light reproduction efficiency. |
