发明名称 ALIGNMENT METHOD
摘要 PURPOSE:To facilitate the matching greatly by providing the key pattern which has no relation with the real element pattern and with no substantial position shift to the mask wafer in addition to the alignment mark and giving the pattern matching to the real element via the key pattern after matching of the mark. CONSTITUTION:The real element pattern 2 along with key pattern 7 which has no position shift to the element pattern are formed to mask 6 with use of reticule 8 for real element pattern and reticule 5 for alignment mark and via the photo repeater. The wafer to be aligned to mask 6 is formed through the same method as that of mask 6, and key pattern 9 is provided in addition to the real element pattern. Mask 6 is formed in such way, and then a matching is first obtained between mask 6 and the wafer's alignment mark. After this, pattern 9 is aligned to align pattern 2. Thus, a matching is secured easily between the mask, the wafer and the real element pattern each.
申请公布号 JPS54157478(A) 申请公布日期 1979.12.12
申请号 JP19780066400 申请日期 1978.06.01
申请人 CANON KK 发明人 OKUTSU KAZUHISA;MOMOSE KATSUMI;HIRAGA RIYOUZOU
分类号 H01L21/30;G03F9/00;H01L21/027 主分类号 H01L21/30
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