| 摘要 |
PURPOSE:To increase supplying efficiency thus providing low consumption of electric power as well as a high speed operation by arranging an emitter region of a lateral transistor eondtituting as I<2>L element, in such a way that the emitter region has a nearly stepped gradient of impurity density with at a base region side the lowest. CONSTITUTION:An N type layer 2 with a density of 3.5X10<14>/cm<3> used as a base region, is formed by means of the epitaxial growth on an N<+> type Si substrate 1 that has an impurity density of 5X10<18>/cm<3>. Then a P type emitter region 3 and a P type collector region 4 are diffused with their surface density of 10<18>/cm<3>. A P<+> type region 13 that has a surface density of 5X10<20>/cm<3> is formed in the emitter region 3, thus the density of the upper side of the emitter region 3 becomes higher than the bottom side or the side next to the layer 2. As a result, a stepped density gradient is formed in the emitter region 3. Then N<+>type regions 5 and 6 are formed by means of diffusion within the region 4, and the first and second outpud terminals are connected respectively. A power source terminal 7 is fixed to the region 13, while an input terminal 8 is fixed to the region 4. By so doing, supplying efficiency is increased by the order of 10, thus reducing electric power consumption. |
