| 摘要 |
Epitaxial layers of single crystals of gallium arsenide and similar compounds are formed by vapor deposition. A carrier gas flow is passed through a liquid halide of a group VB material to obtain a first vapor having a halogen, carrier gas and group VB material. The carrier gas flow is monitored and adjusted to obtain a predetermined mass of halogen and second material in this raw vapor. A final reactor input vapor is obtained with constant concentration and constant flow going into a reactor by monitoring the total volume of carrier gas in the raw vapor as added per unit of time and adjusting the raw vapor by adding a volume of additional carrier gas to a predetermined value to form a final reactor input vapor. The reaction and deposition of the epitaxial layer is then carried out in a reactor. A system is used for obtaining constant flow within the reactor with addition of dopants at desired levels while maintaining a constant dilution to the input flow so as to maintain at a deposition substrate, a predetermined constant flow or concentration of amount of reactants to carrier and diluent gas used.
|
