发明名称 Multi-layer non-volatile memory system having multiple partitions in a layer
摘要 A multi-layer memory and method for operation is disclosed. The memory includes multiple layers, where each layer includes flash memory cells having a greater bit per cell capacity than the prior layer and each layer may include a plurality of partitions having blocks exclusively associated with a particular data type. The method may include directing host data directly into a particular partition of a particular layer of the multi-layer memory upon receipt depending on a type of the data. The method may also include copying data within the same partition in a respective layer in a data relocation operation to generate more free blocks of memory so that data preferably stays within each layer and in the same partition, as well as transferring data from one layer to the next higher bit per cell layer within a same partition when layer transfer criteria are met.
申请公布号 US9465731(B2) 申请公布日期 2016.10.11
申请号 US201313827351 申请日期 2013.03.14
申请人 SanDisk Technologies LLC 发明人 Sinclair Alan Welsh;Thomas Nicholas James;Wright Barry
分类号 G06F12/02 主分类号 G06F12/02
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A mass storage memory system, comprising: an interface adapted to receive data from a host system; a flash memory having a plurality of layers, each of the plurality of layers having a different bit-per-cell data capacity; wherein each of the plurality of layers comprises: a plurality of partitions, each partition of the plurality of partitions being associated with a different one of a plurality of data type characteristics; anda plurality of memory blocks, wherein each programmed block of the plurality of memory blocks is exclusively classified as being in a respective one of the plurality of partitions; and a controller in communication with the interface and the flash memory, the controller configured to: direct the data received from the host system to a first block in a first partition of a first layer of the plurality of layers of the flash memory; anddynamically adjust a size of the first partition by moving the data from the first block to a second block in a second partition of a second layer of the plurality of layers, and reallocating the first block to a pool of free blocks for later use in any partition of the first layer, wherein the first partition of the first layer and the second partition of the second layer are associated with a same data type characteristic of the plurality of data type characteristics.
地址 Plano TX US