发明名称 CHARGE COUPLING ELEMENT
摘要 PURPOSE:To perform uniform and high speed charge transfer by selectively converting one side of a conductive film installed on an insulating film into an insulating film wherein the interval between transfer electrodes is remarkably shortened. CONSTITUTION:Doped poly-Sis 511a, 512a... with the width dc, interval dd are formed on the oxide thin film 2 of an N-type Si substrate and covered by a nitride film 7. The nitride film is etched to be in the condition of shifting by do in the direction of transfer and oxide films 8 with the thickness of t are formed. Selective etching is made for the nitride film 7 and an Al film is evaporated on whole of the surface to etch Al on the oxide films 8. Transfer electrodes composed by the combination of the high concentrated doped poly Si layers 511a... and Al film 511b... are insulted by the oxide films 8 and the interval between electrodes becomes the thickness of the film t from the view point of CCD operation. Because the interval is extremely small and the variation is minimized, high speed transfer is made possible and the transfer speed for each electrode is uniform, while high integration is also made possible.
申请公布号 JPS568877(A) 申请公布日期 1981.01.29
申请号 JP19790083932 申请日期 1979.07.04
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 FUJIKI KUNIMITSU
分类号 H01L29/762;H01L21/339;H01L21/8234;H01L29/76;H01L29/772;(IPC1-7):01L29/76 主分类号 H01L29/762
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