| 摘要 |
PURPOSE:To accelerate the treating speed of the microwave plasma treating method by presenting infinitesimal amount of inert gas in a low pressure treating gas whe the plasma is generated in the low pressure treating gas and a semiconductor wafer is etched with this plasma and thereby stabilizing the generation of the microwave plasma. CONSTITUTION:The microwave generator 1 is connected through a microwave passage of small diameter to a reaction chamber 2, and a quartz treating chamber 3 is contained in the reaction chamber 2 while a gas supply port 4 and a gas exhaust port 5 provided at the chamber 3 are externally projected. The semiconductor wafer 7 placed on a wafer holder 6 is contained in the treating chamber 3. When the device is thus constructed, the treating chamber 3 is evacuated to a pressure lower than 0.1 Torr and treating gas is fed through the supply port 4, the treating gas is set at 0.1 Torr, and Ar gas is mixed therewith at 0.01-0.05 Torr. Thereafter, the microwave power from the generator 1 is fed into the reaction chamber 2, and a preferable plasma is produced in the treating chamber 3. |
