| 摘要 |
PURPOSE:To prevent the lowering of precision of a pattern by exposing a radiation resist of a far-ultraviolet ray and developing the same after heat treatment in a process of photoprocessing whereby minute patterns such as wiring patterns are formed. CONSTITUTION:Through exposure, constant-pressure waves are caused within a resist film by interference of light, thereby the amount of exposure turns insufficient in a nodal part, and especially in the resist on the surface of a flat A film or the like having a high reflection ratio to the farultraviolet ray, the above-mentioned phenomenon appears to a large extent. To cope with this, heat treatment is applied to expedite the dissolution of the resist in a low exposure area prior to development. By this method, melting removal is made at nearly a uniform speed throughout the whole area and thereby the resist pattern of precise dimension can be formed. |
