| 摘要 |
<p>PURPOSE:To control the characteristics of the main body element, by performing P<+> diffusion in the source-drain N<+> diffused part of a test pattern region at the time of the gate P<+> diffusion, and measuring source-drain current-voltage characteristics in the test pattern region. CONSTITUTION:An n epitaxial layer 2 is layered on a p<+>Si substrate 1, windows are opened in SiO2 film 4, and n<+> layers 5 and 6 formed. Then a p+ gate 7 is formed and p<+> layers 8 and 9 are provided in the n<+> layers 5 and 6 in the test pattern region II. Windows are opened in the SiO2 film, a probe is contacted, and the waveform of the current IDSS between the source and the drain is measured with respect to the voltage VDS in the region II. If the concentration of the n<+> layer is controlled based on the measured result, IDSS of the junction type FET can be precisely controlled in the region I. Thereafter, electrodes S, G, and D are attached, and the work is completed.</p> |
