| 摘要 |
PURPOSE:To exfoliate inorganic resist materials, which are obtained by laminating amorphous chalcogenide layers, the principal ingredient thereof is Se, and silver or layers containing silver, easily and improve productivity by forming an intermediate layer between the inorganic resist materials and a material to which a pattern is made up. CONSTITUTION:Inorganic resist layers 3 consisting of amorphous chalcogenide layers 3a, the principal ingredient thereof is Se, and silver or thin-films 3b containing silver are laminated on a material 1 to which a pattern is formed through an intermediate layer 2 in amorphous Si, amorphous Ge, Ni, etc., energy rays 4 are irradiated until the desired pattern is obtained and dope layers 5 are made up, the layers 3b, 3a are removed successively by means of etching, and the intermediate layer 2 and the material 1 to which the pattern is formed are processed by means of etching using the dope layers 5 as masks. Thus, since the resist material is easily exfoliated, productivity is improved, and the pollution of the material to which the pattern is formed can be prevented. |
