HYDROGEN ANNEALING PROCESS FOR SILICON GATE MEMORY DEVICE.,申请号EP19800901693-传众专利搜索

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发明名称	HYDROGEN ANNEALING PROCESS FOR SILICON GATE MEMORY DEVICE.
摘要
申请公布号	EP0034168(A4)	申请公布日期	1981.12.10
申请号	EP19800901693	申请日期	1981.02.24
申请人	NCR CORPORATION	发明人	TRUDEL, MURRAY LAWRENCE;DHAM, VINOD KUMAR CENTRAL PARK APARTMENTS, APT. 92
分类号	G11C14/00;H01L21/30;H01L21/324;H01L21/8247;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/324;H01L21/477	主分类号	G11C14/00
代理机构		代理人
主权项
地址

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