| 摘要 |
PURPOSE:To obtain the stable and highly sensitive bipolar element by a method wherein either of an emitter layer or a collector layer is formed with CdS or a semiconductor containing CdS, the other with one of Al, In, Ga, Cd, Te and a base layer is made of CdTe or a semiconductor containing CdTe. CONSTITUTION:The N type film 3 of CdS or CdS containing an element of the II group or the VII group is formed on a quartz glass 1. The P type base film 4 of CdTe containing Li, Sb, etc., and the N type collector film 5 made of one of Al, In, Ga, Cd, Te are fomed thereon, and an electrode of Au, etc., is adhered thereon. In this NPN type transistor, becuase electron acts dominatingly, it is favorable to make the film area of the upper layer larger than the lower layer. By this constituion, the transistor can be manufactured easily in an optional shape, the area and the length thereof can be enlarged, stability and reliability are enhanced, and high sensitivity can be obtained when it is used as a photo-transistor. |
